junction transistor造句

• The concepts described above are embodied in the junction transistor .
  上述各种概念都反映在结型晶体管中。
• Bipolar junction transistor - bjt
  双极结型晶体管
• Bipolar junction transistor , bjt
  双载子晶体管
• Bipolar junction transistor
  双极面结型晶体管
• Point - junction transistor
  点接合型晶体管
• Bipolar junction transistor
  双极晶体管
• Standard test method of measurement of common - emitter d - c current gain of junction transistors
  结型晶体管共射极直流增益测量的标准试验方法
• Of course they used cisc chips ; specifically , bipolar junction transistors with a cisc architecture
  当然，它们使用的是cisc芯片：具体地讲，是具有cisc体系结构的二极管。
• Semiconductor , diodes , bipolar junction transistors , field - effect transistors , transistor amplifiers , frequency response , operational amplifiers , differential and multistage amplifiers , integrated circuits
  半导体、二极体、双极电晶体、场效电晶体、电晶体放大器、频率响应、算放大器、差动及多极放大器、积体电路。
• The course concentrates on circuits using the bipolar junction transistor , but the techniques that are studied can be equally applied to circuits using jfets , mosfets , mesfets , future exotic devices , or even vacuum tubes
  本课程集中讲解使用双极结晶体管的电路，但所学技术同样适用于使用jfet ， mosfet , mesfet ，未来的稀有装置，甚至真空管的电路。
• It has been shown that the performance of sige heterojunction bipolar transistor ( sige hbt ) in high frequency is much better than that of si bipolar junction transistor ( si bjt ) , and is better than that of algaas / gaas metal semiconductor field effect transistor ( algaas / gaas mesfet ) in some aspects
  Sige异质结双极晶体管（ sigehbt ）的高频性能大大优于si双极晶体管（ sibjt ） ，并在某些方面优于algaas / gaasmesfet ，所以sigehbt具有广阔的应用前景。
• This paper realized frequency modulation using the video signal to directly control the resonance loop ' s diode of the vco at the early stages , and then through using radio frequency bipolar junction transistor , designed a lc voltage controlled oscillator which was emulated by advance design system . in addition , it also implemented the design and debugged the hardware circuit
  本文第一次实验采用视频信号直接控制vco谐振回路变容二极管的方式实现频率调制,并且利用射频双极性晶体管( bjt )设计了一种lc压控振荡器,通过ads软件进行了参数仿真,最后进行了硬件电路的制作和调试。
• There are three power transistor which have been widely used in s band now : bipolar junction transistor ( bjt ) , gaas metal - oxide semiconductor field effect transistor ( gaas mosfet ) and lateral diffuse metal - oxide semiconductor field effect transistor ( ldmos fet ) . thanks to the advantages , such as , wide frequency , easy power supply , good stability , the ldmos fet has used in the motion telecommunication
  目前在s波段人们常用的放大器有双极性晶体管( bjt ) 、砷化镓场效应晶体管( gaasmosfet ) 、边缘扩散场效应晶体管（ ldmosfet ）等，由于ldmosfet具有频带宽、供电方便、稳定可靠等优势，目前已经广泛用于移动通信3g的研究。